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Benjamin Haskell, Ph.D.
Inlustra Technologies, Inc. 

Dr. Benjamin A. Haskell is a leading researcher in nonpolar gallium nitride (GaN) thick film growth, defect reduction, and substrates. Dr. Haskell’s research while a graduate student and then post-doctoral researcher under Prof. Shuji Nakamura at the University of California, Santa Barbara, yielded the first planar a-plane and m-plane GaN films grown by HVPE, as well as the first demonstrations of HVPE-based lateral epitaxial overgrowth for microstructural defect reduction in these films. He is author or co-author of over twenty issued and pending patents on nonpolar and semipolar GaN crystal growth, processing, and device fabrication.  Dr. Haskell currently serves as Chief Executive Officer of Inlustra Technologies, Inc., a Santa Barbara, CA-based startup company that is commercializing large-area nonpolar and semipolar GaN substrate technology for laser and LED applications.

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