Dr. Reza Arghavani
Fellow
Applied Materials

Reza Arghavani is a Fellow at Applied Materials. In 2002 Dr. Arghavani joined Applied Materials as Senior Director of Technology and later became a Distinguished Member of Technical Staff and Fellow. At Applied, he led a team responsible for creating a series of stress inducing dielectrics, which are currently in use in high volume manufacturing for both Logic and Non-Volatile Memory applications. Dr. Arghavani is currently focused on developing Thin Film Technologies to enable the sub-32nm node Logic/Non-Volatile Memories technology.

Prior to joining Applied, Dr. Arghavani worked at Intel Corporation in Logic Technology Development responsible for developing, manufacturing, and copy exactly transferring three generations of high performance microprocessor gate stack technology. He was also responsible for integration, yield analysis, and failure analysis of front and backend processes.

Dr. Arghavani graduated from University of California at Los Angeles with a Ph.D. in Physics. His thesis topic focused on the growth and characteristics of SiGe heterostructures deposited by molecular beam epitaxy. He holds 48 U.S. patents and has authored over 40 papers in technical journals. He has won numerous Corporate Achievement Awards and has two best paper awards.